2
RF Device Data
Freescale Semiconductor
MRF6V10250HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
500
nAdc
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
= 100 mA)
V(BR)DSS
100
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
50
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=90Vdc,VGS
=0Vdc)
IDSS
?
?
2
mA
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 528
μAdc)
VGS(th)
1
1.8
3
Vdc
Gate Quiescent Voltage
(VDD
=50Vdc,ID
= 250 mAdc, Measured in Functional Test)
VGS(Q)
2
2.4
3
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1.32Adc)
VDS(on)
?
0.25
?
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
0.8
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
340
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
280
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 250 mA, Pout
= 250 W Peak (25 W Avg.), f = 1090 MHz,
Pulsed, 100
μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
19
21
23
dB
Drain Efficiency
ηD
55
60
?
%
Input Return Loss
IRL
?
-- 1 2
-- 9
dB
1. Part internally matched both on input and output.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF6V12500HR5
FET RF N-CH 1.03GHZ 100V NI-780H
MRF6V14300HSR5
MOSFET RF N-CH 50V NI780S
MRF6V2010GNR5
MOSFET RF N-CH 10W TO-270-2
MRF6V2150NBR5
MOSFET RF N-CH 50V TO272-4
MRF6V2300NR5
MOSFET RF N-CH 300W TO-270-4
MRF6V3090NR5
FET RF N-CH 860MHZ 50V TO270-4
MRF6V4300NR5
MOSFET RF N-CH 300W TO-270-4
MRF6VP11KHR6
MOSFET RF N-CH 1000W NI1230
相关代理商/技术参数
MRF6V12250HR3
功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12250HR5
功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12250HSR3
功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12250HSR5
功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12500H
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6V12500HR3
功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V12500HR3_10
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V12500HR5
功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780H
RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray